Method of fabricating a via for an SRAM device

Details Method of fabricating a via for an SRAM device Method of fabricating a via for an SRAM device

1996-08-16

1998-01-27

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 46, 437191, H01L 218244

Patent

active

057121834

ABSTRACT:
A method of fabricating a via, that reduces contact resistance between two conductive layers. A conductive layer is formed at the periphery of a top surface of a gate. An insulating layer is formed over the gate, and is etched to form a via exposing the top surface of the gate and portions of the conductive layer. The top surface of the gate and the exposed conductive layer form a step profile, which provides extra contact area without increasing the lateral extent of the via.

REFERENCES:
patent: 5246876 (1993-09-01), Manning
patent: 5298782 (1994-03-01), Sandaresan
patent: 5393689 (1995-02-01), Pfiester et al.
patent: 5462894 (1995-10-01), Spinner et al.

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