Method of fabricating a tungsten contact

Details Method of fabricating a tungsten contact Method of fabricating a tungsten contact

1993-12-06

1995-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 34, 437978, H01L 21441

Patent

active

054223083

ABSTRACT:
A method of fabricating a tungsten contact in a semiconductor device comprises providing an oxide layer on a region of a silicon substrate; depositing a sealing dielectric layer over the oxide layer; and depositing an interlevel dielectric layer over the sealing layer. The interlevel dielectric layer, the sealing dielectric layer and the oxide layer are then etched through as far as the substrate thereby to form a contact hole and to expose the said region. A dopant is implanted into the said region whereby the implanted dopant is self-aligned to the contact hole. The substrate is thermally annealed. Tungsten is selectively deposited in the contact hole and an interconnect layer is deposited over the deposited tungsten contact. The invention also provides a semiconductor device which incorporates a tungsten contact and which can be fabricated by the method.

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