Method of fabricating a trench capacitor with a deposited isolat

Details Method of fabricating a trench capacitor with a deposited isolat Method of fabricating a trench capacitor with a deposited isolat

1998-04-06

1999-12-28

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438243, 438248, 438391, H01L 2120

Patent

active

06008104&

ABSTRACT:
An improved trench capacitor is achieved by providing a node dielectric that lines the collar and sidewalls of the bottom of the trench. Further, the trench capacitor includes a lower portion having a diameter that is substantially the about same or greater than that of the upper portion.

REFERENCES:
patent: 5656535 (1997-08-01), Ho et al.
patent: 5658816 (1997-08-01), Rajeevakumar

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