Method of fabricating a thin-film transistor matrix for an activ

Details Method of fabricating a thin-film transistor matrix for an activ Method of fabricating a thin-film transistor matrix for an activ

1991-05-28

1993-07-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437909, 20419217, H01L 21336, H01L 21285

Patent

active

052253643

ABSTRACT:
A TFT matrix for an active matrix display panel has a plurality of TFTs arranged in rows and columns to form a matrix array. Each of the TFT has a control electrode on a dielectric substrate, a first insulator film formed on the control electrode, a second insulator film formed on the first insulator film, a-Si semiconductor layer formed on the second insulator film, and first and second (drain and source) electrodes formed on the a-Si semiconductor layer. The matrix has a plurality of transparent electrodes that contact the second electrodes, row interconnection layers interconnecting the control electrodes of the TFTs of the respective rows, and column interconnection layers interconnecting the first electrodes of the TFTs of the respective columns. The control electrodes and the row interconnection layers (gate electrodes) are made of an alloy of tantalum with tungsten, nickel, cobalt, rhodium, or iridium. The first insulator is formed by anodizing the surface of the gate electrode. The gate electrode has low resistance, improving the quality of the display without impairing insulation performance.

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12-in. Full-Color a-Si:H TFT-LCD with Pixel Electrode Buried in Gate Insulator, Hiroaki Moriyama et al., SID 89 Digest pp. 144-147 (1989).

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