Method of fabricating a thin film transistor having vertical cha

Details Method of fabricating a thin film transistor having vertical cha Method of fabricating a thin film transistor having vertical cha

1995-06-20

1996-10-08

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 257401, 257 60, H01L 21336

Patent

active

055630774

ABSTRACT:
A thin film transistor having a vertical channel provided according to the invention comprises a vertical channel 4B having a sideways angular U-shaped or "" -shaped cross-section; source and drain areas 5 formed respectively in two ends of the channel 4B, and a gate electrode 7 surrounding a gate insulating layer 6 formed on upper and outer sides of the channel except for the source and drain areas. Accordingly, the satisfactory channel length in less area can be obtained and the leakage current can be reduced when the transistor is in Off state.

REFERENCES:
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patent: 4929987 (1990-05-01), Einthoven
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patent: 5087581 (1992-02-01), Rodder
patent: 5391506 (1995-02-01), Tada et al.
patent: 5403763 (1995-04-01), Yamazaki

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