Method of fabricating a thin-film transistor having an offset ga

Details Method of fabricating a thin-film transistor having an offset ga Method of fabricating a thin-film transistor having an offset ga

1994-12-19

1995-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 44, 437229, H01L 2186

Patent

active

054398371

ABSTRACT:
Using a gate electrode formed on a semiconductor film as a mask, impurity ions are implanted into the semiconductor film. Thereafter, a photoresist film is formed on the substrate including the gate electrode. The photoresist film on the gate electrode is then exposed to light from a back side of the gate electrode. By this self-alignment method, a resist pattern narrower than the gate electrode is formed. Then, the gate electrode is narrowed through the etching thereof using the photoresist pattern as a mask, whereby an offset gate structure of a thin-film transistor is obtained.

REFERENCES:
patent: 5137841 (1992-08-01), Takeda et al.
patent: 5306653 (1994-04-01), Hur
patent: 5362661 (1994-11-01), Kim
patent: 5385854 (1995-01-01), Batra et al.

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