Method of fabricating a thin film transistor having a silicon ca

Details Method of fabricating a thin film transistor having a silicon ca Method of fabricating a thin film transistor having a silicon ca

1991-03-15

1993-06-22

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437100, 437909, 257 57, 257 63, H01L 21336, H01L 29184

Patent

active

052216314

ABSTRACT:
A method of making a thin film transistor is described incorporating the steps of forming a gate electrode, a layer of insulating material, a layer of buffer material, a layer of semiconductor material, a source electrode and drain electrode. The invention reduces the problem of variation in threshold voltage of thin film transistors due to external stress such as the gate voltage or temperature.

REFERENCES:
patent: 5053354 (1991-10-01), Tanaka et al.
Wolf et al., Silicon Processing for the VLSI Era, Volume 1: Process Technology, Lattice Press, 1986, p. 581.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 512-514.
Sasaki et al., "An Amorphous SiC:H Emitter Heterojunction Bipolar Transistor" Jun. 1985, IEEE Electron Device Letters, vol. 6, No. 6.

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