Method of fabricating a thin film transistor

Details Method of fabricating a thin film transistor Method of fabricating a thin film transistor

1995-02-03

1996-12-17

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437 42, 437978, H01L 21265

Patent

active

055852920

ABSTRACT:
A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insulator comprises an ONO structure having an interfacial oxide layer in contact with the polycrystalline silicon semiconductor layer, a cap oxide layer in contact with the gate electrode, and a nitride layer interposed between the interfacial oxide layer and the nitride layer.

REFERENCES:
patent: 5412493 (1995-05-01), Kunii
Batra et al "Development of Polysilicon TFT's for 16MB SRAM'S and Beyond" IEEE Trans. on Elect. Devices V40, No. 11, Nov. 1993 pp. 2125-2126.

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