Method of fabricating a thin film transistor

Details Method of fabricating a thin film transistor Method of fabricating a thin film transistor

1989-05-30

1992-04-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437101, 437233, 148DIG1, 148DIG122, H01L 21205

Patent

active

051028131

ABSTRACT:
A thin film transistor is produced by applying onto a non-silicon foundation, a thin film of silicon semiconductor material under such conditions that polycrystalline or microcrystalline material is formed. Source and/or drain regions of doped semiconductor material are then formed onto the film; following by applying insulating material onto the film, and a gate region onto the insulating material. The source and/or drain regions are applied so that such regions have a crystalline structure that depends upon the crystalline structure of the underlying thin film. The resulting source and drain regions have high lateral conductivity so that source and drain contacts can be made with reduced cross-sectional areas. The method may employ a self-alignment process to simplify device production.

REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4523214 (1985-06-01), Hirose et al.
patent: 4597160 (1986-07-01), Ipri
patent: 4727044 (1988-02-01), Yamazaki
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4746628 (1988-05-01), Takafuji
patent: 4762808 (1988-08-01), Sharp et al.
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4800174 (1989-01-01), Ishihara et al.
patent: 4842897 (1989-06-01), Takeuchi et al.
patent: 4880753 (1989-11-01), Meakin et al.

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