Method of fabricating a thin film transistor

Details Method of fabricating a thin film transistor Method of fabricating a thin film transistor

2006-02-28

2006-02-28

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S486000, C438S487000, C438S317000, C438S475000, C438S528000, C438S535000, C438S162000, C438S166000, C438S910000

Reexamination Certificate

active

07005362

ABSTRACT:
A method of fabricating a TFT includes a step of forming an impurity region for a source and a drain by simultaneously implanting and activating impurity ions. More particularly, the present invention includes the steps of forming a gate insulating layer and a gate on a predetermined and selected portion of an active layer, forming an excited region in the exposed portion of the active layer by implanting hydrogen ions to the active layer by using the gate as a mask, and forming an impurity region by implanting impurity ions heavily to the excited region which remains in an excited state.

REFERENCES:
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5512494 (1996-04-01), Tanabe
patent: 5620906 (1997-04-01), Yamaguchi et al.
patent: 5897346 (1999-04-01), Yamaguchi et al.
patent: 5956581 (1999-09-01), Yamazaki et al.
patent: 9-251964 (1997-09-01), None

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