Method of fabricating a textured tunnel oxide for EEPROM applica

Details Method of fabricating a textured tunnel oxide for EEPROM applica Method of fabricating a textured tunnel oxide for EEPROM applica

1993-07-22

1995-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

257321, 437977, H01L 21265

Patent

active

054299667

ABSTRACT:
Disclosed is a thin textured tunnel oxide prepared by thermal oxidation of a thin polysilicon film on Si substrate. Due to the rapid diffusion of oxygen through grain boundries of the thin polysilicon film into the Si substrate and the enhanced oxidation rate at grain boundries, a textured Si/SiO.sub.2 interface is obtained. The textured Si/SiO.sub.2 interface results in localized high fields and causes a much higher electron injection rate. EEPROM memory cells having the textured Si/SiO.sub.2 exhibit a lower electron trapping rate and a lower interface state generation rate even under high field operation.

REFERENCES:
patent: 5158902 (1992-10-01), Hanada
patent: 5208173 (1993-05-01), Yamada et al.
patent: 5219774 (1993-06-01), Vasche
patent: 5268320 (1993-12-01), Holler et al.
Wolf, "Silicon Processing for the VLSI Era", vol. II, pp. 168-169, 1990.
Hiroshi Nozawa, et al--"An EEPROM Cell Using A Low Barrier Height Tunnel Oxide"--IEE Transactions on Electron Devices, vol. ED-33, No. 2 Feb. 1986-pp. 275-280.
Eiichi Suzuki, et al--"Hole and Electron Current Transport In Metal-Oxide-Nitride . . . "--IEEE Trans. Electron Devices, vol. 36, No. 6, pp. 1145-1149, Jun. 1989.
S. K. Lai, et al--"Comparison and Trends in Today's Dominant E.sup.2 Technologies"--IEDM Tech. Dig., pp. 580-583, 1986.
Y. Fong, et al--"Oxides Grown On Textured Single-Crystal . . . "--Solid State Electronics, vol. 34, No. 11, pp. 1139-1141.
Christopher J. Hegarty, et al--"Enhanced Conductivity and Breakdown of Oxides . . . "--Solid State Electronics, vol. 34, No. 11, pp. 1207-1213, 1991.
Ming-yin Hao, et al--"Electrical Characteristics of Oxynitrides Grown on Textured Single-Crystal Silicon"--Appl. Phys., vol. 60, No. 4, 17 Jan. 1992-pp. 445-447.

Affiliated with

Also associated with

Rating

Method of fabricating a textured tunnel oxide for EEPROM applica does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a textured tunnel oxide for EEPROM applica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a textured tunnel oxide for EEPROM applica will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759680