Method of fabricating a surface emitting semiconductor laser

Details Method of fabricating a surface emitting semiconductor laser Method of fabricating a surface emitting semiconductor laser

1996-12-26

1998-05-05

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

372 46, H01L 2100, H01S 319

Patent

active

057473668

ABSTRACT:
In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.

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