Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2006-09-26
2009-06-16
Chambliss, Alonzo (Department: 2892)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C257S704000, C257S712000, C257S717000, C257SE23051, C361S704000
Reexamination Certificate
active
07547582
ABSTRACT:
A surface adapting cap with an integrated adapting thermally conductive material on single and multi chip module provides reduced gap tolerance and hence better thermal performance of the semiconductor device which enhances the reliability of the semiconductor device. In one of the embodiments the cap is modified with an integrated, confined, and high thermal adaptive material. The membrane on this system is highly flexible. The cap is preassembled to the chip at a temperature above liquidus below curing temperature of the adaptive material. At this state, a hydrostatic pressure in the material develops due to the compression exerted from the cap to the chip and the confined volume of the buried material. This hydrostatic pressure causes the membrane to deflect and to adapt the warping and tolerances of the chip. Due to the adaptive surface the gap on each position of the chip and from chip to chip is same.
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Brunschwiler Thomas J
Kloter Urs
Linderman Ryan Joseph
Michel Bruno
Rothuizen Hugo E
Chambliss Alonzo
International Business Machines - Corporation
Kaufman Stephen C.
Neff Daryl K.
Nelson Eustus D.
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