Method of fabricating a storage gate pixel design

Details Method of fabricating a storage gate pixel design Method of fabricating a storage gate pixel design

2006-12-26

2006-12-26

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21617, C438S057000

Reexamination Certificate

active

07153719

ABSTRACT:
A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed to control the charge barrier and transfer charges from the photodiode to the first charge storage region by effectively lowering the first charge barrier. A transfer transistor acts to transfer charges from the first storage region to the floating diffusion region by reducing the second charge barrier.

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