Method of fabricating a solid-state imaging device

Details Method of fabricating a solid-state imaging device Method of fabricating a solid-state imaging device

2005-01-04

2005-01-04

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S072000, C438S635000, C438S636000, C438S651000, C438S652000, C438S655000, C257S414000, C257S437000, C348S340000

Reexamination Certificate

active

06838305

ABSTRACT:
A method of fabricating a solid-state imaging device is provided, which enables the formation of an anti-reflection film by oxidizing a surface of a metallic light-shield film without adding additional steps, even though the metallic light-shield film is composed of not only refractory metal silicide but also metals, including tungsten and molybdenum. The method comprises the steps of forming a metallic light-shield film on a light receiving sensor and a transfer electrode formed on a surface layer of a wafer, forming an opening on the metallic light-shield film on the light receiving sensor by etching, forming an interlayer film, and shaping the interlayer film into a lens shape by heat treatment. An atmosphere of either one or both of oxygen gas and ozone gas is prepared in a chamber for forming the interlayer film, and a surface of the metallic light-shield-film is oxidized before the interlayer film is formed.

REFERENCES:
patent: 6614479 (2003-09-01), Fukusho et al.
patent: 20030038326 (2003-02-01), Fasen et al.
patent: 20030138988 (2003-07-01), Murakami et al.
patent: 08-078651 (1996-03-01), None
patent: 11-103037 (1999-04-01), None

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