Method of fabricating a solid state image sensing device

Details Method of fabricating a solid state image sensing device Method of fabricating a solid state image sensing device

1987-02-06

1988-12-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, H01L 2714, H01L 3100

Patent

active

047910704

ABSTRACT:
A solid state image sensor including a photoelectric transducing diode (PD) formed on an n-type semiconductor substrate (1) and a MOS transistor (TRs). A signal photoelectrically transduced by the diode (PD) is amplified by a pnp-type transistor (TRa) formed on the substrate and between the diode (PD) and the MOS transistor (TRa). The amplified signal is read out by the MOS transistor. The source (4) of the MOS transistor is connected to the emitter (21) of the pnp-type transistor partly by a polysilicon (91).

REFERENCES:
patent: 3946151 (1976-03-01), Kamiyama et al.
patent: 4148048 (1979-04-01), Takemoto et al.
patent: 4183034 (1980-01-01), Burke et al.
patent: 4316205 (1982-02-01), Aoki et al.
patent: 4402003 (1983-08-01), Blanchard
IEEE Transactions on Electron Devices, vol. ED-29, No. 10, Oct. 1982, pp. 1637-1639.

Affiliated with

Also associated with

Rating

Method of fabricating a solid state image sensing device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a solid state image sensing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a solid state image sensing device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2195995