Method of fabricating a single polysilicon bipolar transistor wh

Details Method of fabricating a single polysilicon bipolar transistor wh Method of fabricating a single polysilicon bipolar transistor wh

1990-02-12

1991-01-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437193, 437984, 437200, 148DIG19, 148DIG123, 357 34, H01L 21331

Patent

active

049835319

ABSTRACT:
An improved bipolar transistor of a BiCMOS integrated circuit is fabricated by utilizing a nitride layer over a thin silicon dioxide layer combined with a polysilicon layer. This bipolar structure has a self-aligned, P-type extrinsic base which results in lower base resistance and improved performance.

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