Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-02-13
1998-06-09
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117932, C03B 1526
Patent
active
057627045
ABSTRACT:
A silicon single-crystal ingot which is nearly uniform in quality over the entire length of the column portion can be obtained to produce high-quality single-crystal silicon with high product yield and has the bottom column portion having the property close to the properties of the top column portion and the middle column portion. The bottom portion does not vary in shape among product lots and can be reproduced in the same shape. The diameter D2 of the bottom portion 2 is controlled in such a manner that the outer surface of the bottom portion 2a on the column portion side has an inclination angle .theta. of 10 to 25 degrees with respect to the outer surface of the column portion 1 and extends to the outer surface of the column portion.
REFERENCES:
patent: 4973377 (1990-11-01), Katsuoka et al.
patent: 5183528 (1993-02-01), Baba et al.
patent: 5246535 (1993-09-01), Kawashima et al.
Kongoji Hiroshi
Maeda Kouji
Matsubara Jun-ichi
Miyake Yuji
Garrett Felisa
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon
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