Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2005-05-10
2005-05-10
Chaudhari, Olik (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S479000, C438S491000, C438S517000, C438S979000, C257S347000, C257S352000
Reexamination Certificate
active
06890827
ABSTRACT:
To address the above-discussed deficiencies of the prior art, the present invention provides an integrated circuit formed on a semiconductor wafer, comprising a doped base substrate; an insulator layer formed over the doped base substrate; and a doped ultra thin active layer formed on the insulator layer, the ultra thin active layer including a gate oxide, a gate formed on the gate oxide, and source and drain regions formed in the ultra thin active layer and adjacent the gate. The present invention therefore provides a semiconductor wafer that provides a doped ultra thin active layer. The lower Ioff in the DRAM transistor allows for lower heat dissipation, and the overall power requirement is decreased. Thus, the present invention provides a lower Ioff with reasonably good ion characteristics.
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Choi Seungmoo
Merchant Sailesh
Roy Pradip K.
Agere Systems Inc.
Chaudhari Olik
Toledo Fernando
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