Method of fabricating a silicon carbide vertical MOSFET and devi

Details Method of fabricating a silicon carbide vertical MOSFET and devi Method of fabricating a silicon carbide vertical MOSFET and devi

1995-01-09

1995-09-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257328, 257343, H01L 29161, H01L 2920, H01L 2922, H01L 2910

Patent

active

054517974

ABSTRACT:
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening is formed in some of the epitaxial layers and a conductive layer is formed therein to electrically connect a drain contact on the rear of the substrate to the components on the front of the substrate.

REFERENCES:
patent: 4859621 (1989-08-01), Einthoven
patent: 5103285 (1992-04-01), Furumura et al.
patent: 5264713 (1993-11-01), Palmour

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