Method of fabricating a silicon carbide vertical MOSFET and devi

Details Method of fabricating a silicon carbide vertical MOSFET and devi Method of fabricating a silicon carbide vertical MOSFET and devi

1993-07-12

1995-03-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, 437 72, 437100, H01L 21265, H01L 21302, H01L 2120

Patent

active

053995155

ABSTRACT:
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.

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patent: 5270244 (1993-12-01), Baliga
Silicon Processing for the VLSI Era, S. Wolf and R. Tauber, vol. 1, p. 325 and p. 556 (1986).

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