Method of fabricating a silicon carbide vertical MOSFET

Details Method of fabricating a silicon carbide vertical MOSFET Method of fabricating a silicon carbide vertical MOSFET

1993-07-12

1995-03-14

Quach, T. N.

Fishing, trapping, and vermin destroying

437 38, 437 90, 437100, 437203, 148DIG148, H01L 2120, H01L 21335

Patent

active

053977173

ABSTRACT:
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening is formed in some of the epitaxial layers and a conductive layer is formed therein to electrically connect a drain contact on the rear of the substrate to the components on the front of the substrate.

REFERENCES:
patent: 4859621 (1989-08-01), Einthoven
patent: 5264713 (1993-11-01), Palmour

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