Etching a substrate: processes – Forming or treating an article whose final configuration has...
Reexamination Certificate
2006-10-10
2006-10-10
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Forming or treating an article whose final configuration has...
C216S041000, C216S074000, C216S079000, C438S733000, C438S734000, C438S739000, C450S005000
Reexamination Certificate
active
07118679
ABSTRACT:
A method of fabricating a sharp protrusion on an underlayer is disclosed. A tip layer is deposited on an underlayer and then a mask layer is deposited on the tip layer. The mask layer is patterned with a beam-and-hat pattern that is used to form a beam-and-hat mask in the mask layer. Portions of the tip layer that are not covered by the beam-and-hat mask are isotropically etched to form a tip including a vertex. Beam portions of the beam-and-hat mask support the hat portion and prevent a release of the hat portion during the isotropic etching process. An anisotropic etch process can be used prior to the isotropic etching process to change a character of the tip. The underlayer can be patterned and etched to form a cantilever that includes the sharp protrusion extending outward of a surface of the cantilever.
REFERENCES:
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 5391259 (1995-02-01), Cathey et al.
patent: 6069018 (2000-05-01), Song et al.
Hartwell Peter G.
Yoon Uija
Ahmed Shamim
Hewlett--Packard Development Company, L.P.
LandOfFree
Method of fabricating a sharp protrusion does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a sharp protrusion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a sharp protrusion will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3649886