Method of fabricating a shallow trench isolation

Details Method of fabricating a shallow trench isolation Method of fabricating a shallow trench isolation

1998-11-18

2000-09-05

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438437, 148DIG50, H01L 2176

Patent

active

061142204

ABSTRACT:
A method of fabricating a shallow trench isolation includes formation of a trench in a substrate. An oxide layer is formed on the substrate to fill the trench. A barrier layer and a coating layer are formed in sequence over the substrate. A first etching step is performed to remove a portion of the coating layer and the oxide layer to at least expose the oxide layer on the mask layer. A second etching step is performed to remove the other portion of the coating layer and the oxide layer until exposing the mask layer. Thus, micro-scratches and defects do not happen and thus the invention prevents the occurrence of bridging effect and short circuits.

REFERENCES:
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patent: 5175122 (1992-12-01), Wang et al.
patent: 5435888 (1995-07-01), Kalnitsky et al.
patent: 5691215 (1997-11-01), Dai et al.
patent: 5728621 (1998-03-01), Zheng et al.

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