Method of fabricating a semiconductor substrate, and semiconduct

Details Method of fabricating a semiconductor substrate, and semiconduct Method of fabricating a semiconductor substrate, and semiconduct

1989-05-17

1992-01-28

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 61, 437 67, 437 69, H01L 21331, H01L 2176

Patent

active

050844024

ABSTRACT:
A semiconductor device employing a new isolation process is disclosed, wherein an isolation area is a region in which a burying material is buried in a deep groove formed in a semiconductor body with a substantially constant width by anisotropic dry etching, semiconductor elements are formed in selected ones of semiconductor regions isolated by the isolation area, and others of the semiconductor regions, with no semiconductor element formed therein, have their whole surface covered with a thick oxide film which is produced by the local oxidation of the semiconductor body.
The new isolation process is well-suited for a bipolar type semiconductor device, wherein the deep groove is formed so as to reach a semiconductor substrate through an N.sup.+ -type buried layer, and a thick oxide film formed simultaneously with the aforementioned thick oxide film isolates the base region and collector contact region of a bipolar transistor.

REFERENCES:
patent: 3993513 (1976-11-01), O'Brien
patent: 4238278 (1980-12-01), Antipov
patent: 4390393 (1983-06-01), Glezzo
patent: 4454647 (1984-06-01), Joy et al.
patent: 4455740 (1984-06-01), Iwai
patent: 4542579 (1985-09-01), Paponiak
patent: 4853343 (1989-08-01), Uchida
"Isolation method shrinks bipolar cells for fast, dense, memories", Peltzer, Electronics, Mar. 1, 1971, pp. 53-55.

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