Method of fabricating a semiconductor structure that...

Details Method of fabricating a semiconductor structure that... Method of fabricating a semiconductor structure that...

2008-03-25

2008-03-25

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21122

Reexamination Certificate

active

07348259

ABSTRACT:
A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si1-xGexbuffer is deposited where the Ge composition x is increasing from about zero to a value less than about 20%. Then a first etch-stop Si1-yGeylayer is deposited where the Ge composition y is larger than about 20% so that the layer is an effective etch-stop. A second etch-stop layer of strained Si is then grown. The deposited layer is bonded to a second substrate. After that the first substrate is removed to release said first etch-stop S1-yGeylayer. The remaining structure is then removed in another step to release the second etch-stop layer. According to another aspect of the invention, a semiconductor structure is provided. The structure has a layer in which semiconductor devices are to be formed. The semiconductor structure includes a substrate, an insulating layer, a relaxed SiGe layer where the Ge composition is larger than approximately 15%, and a device layer selected from a group consisting of, but not limited to, strained-Si, relaxed Si1-yGeylayer, strained Si1-zGezlayer, Ge, GaAs, III-V materials, and II-VI materials, where Ge compositions y and z are values between 0 and 1.

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