Method of fabricating a semiconductor structure having an improv

Details Method of fabricating a semiconductor structure having an improv Method of fabricating a semiconductor structure having an improv

1991-03-01

1992-12-29

Fourson, George

Fishing, trapping, and vermin destroying

437238, 437241, 437967, H01L 214763

Patent

active

051751291

ABSTRACT:
A semiconductor structure having an improved polysilicon layer is formed. After the formation of a silicon dioxide layer over a semiconductor wafer, the semiconductor wafer is heated in an ambient comprised of nitrogen. The heating is preferably accomplished so that nitridation of the silicon dioxide does not take place. Subsequently, a polysilicon layer is formed on the silicon dioxide layer. The polysilicon layer is denser and thus more resistant to hydrogen fluoride than polysilicon formed without exposing the silicon dioxide layer to nitrogen.

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