Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-02-09
1985-07-02
Ozaki, George T.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 148188, 148189, 252 623ZT, 29569L, H01L 21208, H01L 21223
Patent
active
045266328
ABSTRACT:
A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in a Zn atmosphere to produce an n type region. Crystal growth is conducted while controlling the vapor pressure of the constituent Group IVB element to produce a p type region. A combination of all these steps gives a more stable pn junction.
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Ito Kazuomi
Nishizawa Jun-ichi
Okuno Yasuo
Jun-Ichi Nishizawa
Ozaki George T.
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