Fishing – trapping – and vermin destroying
Patent
1991-11-27
1992-09-08
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437133, 372 43, 372 46, 372 96, 148DIG95, 148DIG84, 357 16, 357 17, H01L 2120
Patent
active
051457920
ABSTRACT:
A semiconductor optical device having a quantum well structure which can easily integrate plural optical devices of band gaps which are different from each other, and yet can achieve a high coupling coefficient by means of disordering the quantum well structure to form a waveguide region except for the portion which is used as an active region. Non-absorbing edges can be formed on the semiconductor laser on the optically integrated circuits by disordering the facets of the quantum well structure with ion implantation and thermal processing.
REFERENCES:
patent: 4654090 (1987-03-01), Burnham et al.
patent: 4711010 (1988-09-01), Epler et al.
patent: 4748132 (1988-05-01), Fukuzawa et al.
patent: 4755015 (1988-07-01), Uno et al.
patent: 4802182 (1989-01-01), Thornton et al.
patent: 4827482 (1989-05-01), Towe et al.
patent: 4843032 (1989-06-01), Tokuda et al.
patent: 4869568 (1989-09-01), Schinpe
patent: 4871690 (1989-10-01), Holonyale, Jr. et al.
patent: 4872744 (1989-10-01), Abeles et al.
patent: 4875216 (1989-10-01), Thornton et al.
patent: 4922499 (1990-05-01), Nitta et al.
patent: 4922500 (1990-05-01), Chang-Hasnain et al.
patent: 4933301 (1990-06-01), Scifres et al.
patent: 5019519 (1991-05-01), Tanaka et al.
patent: 5048049 (1991-09-01), Amann
patent: 5082342 (1992-01-01), Wight et al.
patent: 5084893 (1992-01-01), Sekii et al.
Suzuki et al. "Fabrication of GaAIAS Window-stripe Multi-quantum-well heterostructure lasers Utilising Zn diffusion-induced alloying", Electronics Letters, vol. 20, No. 9 Apr. 1984, pp. 383-384.
M. Razeghi et al., "Disorder of a GaxInl-xAsyPI-y-InP Quantum Well by Zn Diffusion", Semiconductor Science & Technology, vol. 2, No. 12, Dec. 1987, pp. 793-796.
H. Nakashima et al., "AIGaAS Window Stripe Buried Multiquantum Well Lasers", Japanese Journal of Applied Physics/Part 2, vol. 24, No. 8, Aug. 1985, pp. L647-L649.
Patent Abstracts of Japan, vol. 10, No. 168 (E-411), 14th Jun. 1986, & JP-A-61-018 192 (Hitachi Seisakusto K. K. ) 27-01-1986.
K. Ishida et al., "Fabrication of Index-Guided AIGaAS Multiquantum Well Lasers with Buried Optical Guide by Si-induced Diordering", Japanese Journalof Applied Physics/Part 2, vol. 25, No. 8, Aug. 1986, pp. L690-L697.
S. Murata, et al., "Spectral Characteristics for a 1.5 .mu.m DBR Laser with Frequency-Tuning Region", IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 835-838.
H. Blauvelet, et al., "Large optical cavity AlGaAs buired heterostructure window lasers", American Institute of Physics, Appl. Phys. Lett. 40(12), Jun. 15, 1982, pp. 1029-1031.
R. L. Thornton, et al. "High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows", American Institute of Physics, Appl. Phys. Lett. 49(23), 8 Dec. 1986, pp. 1572-1574.
M. Uematsu, et al., "Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing", Japanese Journal of Applied Physics, vol. 26, No. 8, Aug., 1987, pp. L1407-L-1409.
S. Murata, et al., "Over 720 GHz (5.8 nm) Frequency Tuning by a 1.5 .mu.m DBR Laser with Phase and Bragg Wavelength Control Regions", Electronics Letters, vol. 23, No. 8, 9 Apr. 1987, pp. 403-405.
P. Mei, et al., "Comparative studies of ion-induced mixing of GaAs-AlAs superlattices", American Institute of Physics, Appl. Phys. Lett 52(18), 2 May 1988, pp. 1487-1489.
R. F. Kazarinov, et al., "Narrow-Band Resonant Optical Reflectors and Resonant Optical Transformers for Laser Stabilization and Wavelength Division", IEEE Journal of Quantum Electronics, vol. Qe-23, No. 9, Sep. 1987, pp. 1419-1425.
N. A. Olsson, et al., "Narrow Linewidth 1.5 .mu.m semiconductor laser with a resonant optical reflector", American Institute of Physics, Appl. Phys. Lett. 51(15), 12 Oct. 1987, pp. 1141-1142.
W. D. Laidig, et al., "Disorder of an AlAs-GaAs superlattice by impurity diffusion", American Institute of Physics, Appl. Phys. Lett. 38(10), 15 May 1981, pp. 776-778.
J. J. Coleman, et al., "Disorder of an AlAs-GaAs superlattice by silicon implantation" American Institute of Physics, Appl. Phys. Lett. 40(10), 15 May 1982, pp. 904-906.
K. Meehan, et al., "Disorder of an Al.sub.x Ga.sub.1-x As-GaAs superlattice by donor diffusion", American institute of Physics, Appl. Phys. Lett. 45(5), 1 Sep. 1984, pp. 549-551.
M. Kawabe, et al., "Effects of Be and Si on disordering of the AlAs/GaAs superlattice", American Institute of Physics, Appl. Phys. Lett 46(9), 1 May 1985, pp. 849-850.
Y. Hirayama, et al., "Compositional Disordering of GaAs-Al.sub.x Ga.sub.1-x As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication", Japanese Journal of Applied Physics, vol. 24, No. 7, Jul. 1985, pp. L516-L518.
T. Venkatesan, et al., "Dose-dependent mixing of AlAs-GaAs superlattices by Si ion Implantation", American Institute of Physics, Appl. Phys. Lett. 49(12), Sep. 22, 1986, pp. 701-703.
R. L. Thornton, et al., "Monolithic Waveguide Coupled Cavity Lasers and Modulators Fabricated by Impurity Induced Disordering", IEEE Journal of Lightwave Technology, vol. 6, No. Jun. 1988, pp. 786-792.
J. Werner, et al., "Reduced optical waveguide losses of a partially disordered GaAs/AlGaAs single quantum well laser structure for photonic integrated circuits", American Institute of Physics, Appl. Phys, Lett 53(18), 31 Oct. 1988, pp. 1693-1695.
Optical Measurement Technology Development Co., Ltd.
Wilczewski Mary
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