Method of fabricating a semiconductor light-emitting device

Details Method of fabricating a semiconductor light-emitting device Method of fabricating a semiconductor light-emitting device

2006-04-17

2008-11-18

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C257S101000, C257S102000, C257S103000, C257SE33025, C438S046000

Reexamination Certificate

active

07453096

ABSTRACT:
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

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