Method of fabricating a semiconductor laser device

Details Method of fabricating a semiconductor laser device Method of fabricating a semiconductor laser device

1995-08-31

1997-08-19

Breneman, R. Bruce

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

438 39, 438780, H01L 21203

Patent

active

056588240

ABSTRACT:
A semiconductor laser device includes: a lower cladding layer; an upper cladding layer having a bottom and a strip-shaped ridge portion projecting from the bottom; a II-VI compound semiconductor active layer interposed between the lower cladding layer and the upper cladding layer; and a burying blocking layer made of an aromatic polyamide resin formed on a bottom of the upper cladding layer so as to be in contact with sides of the stripe-shaped ridge portion.

REFERENCES:
patent: 5084894 (1992-01-01), Yamamoto
patent: 5366927 (1994-11-01), Schetzina
patent: 5395791 (1995-03-01), Cheng et al.
patent: 5538918 (1996-07-01), Haase et al.
Itoh et al., "Room temperature pulsed operation of 498nm lasers" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makjuhari, (Aug. 29, 1993 to Sep. 1, 1993) Tokyo, Japan, pp. 53-55.
Sato et al., "Low thermal expansion polymide buried ridge waveguide A1GaAs/GaAs single-quantum-well laser diode" Journal of Applied Physics (1988) 63(3):964-966.
Salokatve et al., "Low voltage, room temperature, ridge waveguide green-blue diode laser" Electronics Letters (1993) 29(23):2041-2042.
Itoh et al., "Room temperature pulsed operation of 498nm laser with ZnMgSSe cladding layers" Electronics Letters (1993) 29(9):766-768.
The Journal of the Institute of Electronics, Information and Communication Engineers "Success in oscillation of a blue-green semiconductor laser at room temperature" (Jul. 1993) p. 818.

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