Method of fabricating a semiconductor laser

Details Method of fabricating a semiconductor laser Method of fabricating a semiconductor laser

1992-12-16

1993-12-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

385130, 372 45, H01L 2120

Patent

active

052683281

ABSTRACT:
A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and forming a structure wherein the outer cladding layer has a smaller width at its portion near to the active waveguide.

REFERENCES:
patent: 5036521 (1991-07-01), Hatakoshi et al.
patent: 5058120 (1991-10-01), Nitta et al.
patent: 5079185 (1992-01-01), Kagawa et al.
Gen-ichi Hatakoshi et al., "Visible-Light Laser Diodes", Kogaku (Optics), vol. 19, pp. 362-368 (1990).

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