Method of fabricating a semiconductor integrated circuit

Details Method of fabricating a semiconductor integrated circuit Method of fabricating a semiconductor integrated circuit

1988-11-15

1990-02-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 27, 437918, 357 51, H01L 21265

Patent

active

048988375

ABSTRACT:
A method of fabricating a semiconductor integrated circuit comprises the steps of: forming buried layers in predetermined regions of a semiconductor substrate; forming an epitaxial layer covering the substrate and the buried layers; forming isolation regions dividing the epitaxial layer into a plurality of islands; selectively implanting ions to form a base region of a vertical bipolar transistor in a surface layer of one island and simultaneously to form a resistor region in a surface layer of another island; and selectively diffusing impurities into a surface layer of the base region, to form an emitter region of the vertical bipolar transistor.

REFERENCES:
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4025364 (1977-05-01), Smith
patent: 4155778 (1979-05-01), Antipov
patent: 4196228 (1980-04-01), Priel et al.
patent: 4233615 (1980-11-01), Takemoto et al.
patent: 4416055 (1983-11-01), McCarthy et al.
patent: 4418469 (1983-12-01), Fujita

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