Method of fabricating a semiconductor device with raised diffusi

Details Method of fabricating a semiconductor device with raised diffusi Method of fabricating a semiconductor device with raised diffusi

1993-12-17

1994-12-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437913, H01L 2170

Patent

active

053765788

ABSTRACT:
A method of forming a MOS FET in which the source, drain, and isolation are all raised above the surface of the single crystal silicon includes the steps of depositing a blanket gate stack including the gate oxide and a set of gate layers, and then depositing isolation members in apertures etched in the gate stack using the gate oxide as an etch stop. The sidewalls that are used to form an LDD source and drain separate a gate contact from source and drain contacts.

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patent: 5015594 (1991-05-01), Chu et al.
patent: 5120571 (1992-06-01), Gill et al.
patent: 5270234 (1993-12-01), Huang et al.
patent: 5286667 (1994-02-01), Lin et al.
patent: 5298443 (1994-03-01), Jang

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