Fishing – trapping – and vermin destroying
Patent
1995-05-18
1996-07-23
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
148DIG95, H01L 2120
Patent
active
055389198
ABSTRACT:
A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack forming a ridge or mesa having a side surface. A metal contact layer is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area, and a layer of diamond-like material is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.
REFERENCES:
patent: H1249 (1993-11-01), Machonkin et al.
patent: 5128006 (1992-07-01), Mitchell et al.
patent: 5131963 (1992-07-01), Ravi
patent: 5258316 (1993-11-01), Ackley et al.
patent: 5293392 (1994-03-01), Shieh et al.
patent: 5299214 (1994-03-01), Nakamura et al.
patent: 5304461 (1994-04-01), Inoue et al.
patent: 5317587 (1994-05-01), Ackley et al.
patent: 5358880 (1994-10-01), Lebby et al.
K. D. Choquette et al., "Vertical-Cavity Surface-Emitting Lasers Fabricated by Vacuum Integrated Processing," IEEE Photonics Technology Letters, vol. 4, No. 9, (Sep. 1992), p. 951-954.
Davis Ken
Lebby Michael S.
Shieh Chan-Long
Breneman R. Bruce
Fleck Linda J.
Motorola
Parsons Eugene A.
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