Method of fabricating a semiconductor device with a trench...

Details Method of fabricating a semiconductor device with a trench... Method of fabricating a semiconductor device with a trench...

2005-02-01

2005-02-01

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S506000, C438S424000

Reexamination Certificate

active

06849919

ABSTRACT:
The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

REFERENCES:
patent: 4472240 (1984-09-01), Kameyama
patent: 4495025 (1985-01-01), Haskell
patent: 5895253 (1999-04-01), Akram
patent: 6034409 (2000-03-01), Sakai et al.
patent: 6137152 (2000-10-01), Wu
patent: 6165871 (2000-12-01), Lim et al.
patent: 6175144 (2001-01-01), Gardner et al.
patent: 6177317 (2001-01-01), Huang et al.
patent: 6207532 (2001-03-01), Lin et al.
patent: 6242788 (2001-06-01), Mizuo
patent: 20020031896 (2002-03-01), Sakamoto
patent: 58-31531 (1983-02-01), None
patent: 58-32430 (1983-02-01), None
patent: 63-115348 (1988-05-01), None
patent: 11-74339 (1999-03-01), None
patent: 2001-4277 (2001-01-01), None
patent: 2001-004277 (2001-01-01), None
patent: 2001-8601 (2001-02-01), None
patent: 2001-008601 (2001-02-01), None
patent: 2001-36818 (2001-05-01), None
patent: 2001-0036818 (2001-05-01), None

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