Method of fabricating a semiconductor device with a polycrystall

Details Method of fabricating a semiconductor device with a polycrystall Method of fabricating a semiconductor device with a polycrystall

1994-06-02

1995-10-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437918, 437191, H01L 2170, H01L 2700

Patent

active

054628890

ABSTRACT:
Provided is a novel method of fabricating a polycrystalline silicon layer serving as a resistive element involved in a high frequency semiconductor integrated circuit device. The novel method essentially comprises following steps. A polycrystalline silicon layer is deposited on an insulation layer covering a semiconductor substrate, followed by a selective photo etching by using a photo resist as a mask, and further followed by a selective doping by using ion-implantation with employing a photo resist pattern so as to introduce dopant into the remaining polycrystalline silicon layer except for a peripheral area having a predetermined width thereby resulting in a resistive layer which comprises not only a doped area but an undped area fencing the doped area.

REFERENCES:
patent: 4256515 (1981-03-01), Miles et al.
patent: 4370798 (1983-02-01), Lien et al.
patent: 4406051 (1983-09-01), Iizuka
patent: 4727045 (1988-02-01), Cheung et al.
patent: 5013686 (1991-05-01), Choi et al.

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