Method of fabricating a semiconductor device utilizing simultane

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29576E, 29576W, 29577C, 148187, 148190, 148191, 357 13, 357 14, 357 48, 357 51, 357 92, H01L 2120, H01L 2174

Patent

active

045057664

ABSTRACT:
A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.

REFERENCES:
patent: 3697337 (1972-10-01), Stehlin
patent: 3881179 (1975-04-01), Howard
patent: 3891480 (1975-06-01), Fulkerson
patent: 3962718 (1976-06-01), Inoue et al.
patent: 4001869 (1977-01-01), Brown
patent: 4170501 (1979-10-01), Khajezadeh
patent: 4177095 (1979-12-01), Nelson
patent: 4258379 (1981-03-01), Watanabe et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating a semiconductor device utilizing simultane does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device utilizing simultane, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device utilizing simultane will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-751692

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.