Method of fabricating a semiconductor device utilizing simultane

Details Method of fabricating a semiconductor device utilizing simultane Method of fabricating a semiconductor device utilizing simultane

1983-05-04

1985-03-19

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29576W, 29577C, 148187, 148190, 148191, 357 13, 357 14, 357 48, 357 51, 357 92, H01L 2120, H01L 2174

Patent

active

045057664

ABSTRACT:
A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.

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patent: 3881179 (1975-04-01), Howard
patent: 3891480 (1975-06-01), Fulkerson
patent: 3962718 (1976-06-01), Inoue et al.
patent: 4001869 (1977-01-01), Brown
patent: 4170501 (1979-10-01), Khajezadeh
patent: 4177095 (1979-12-01), Nelson
patent: 4258379 (1981-03-01), Watanabe et al.

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