Method of fabricating a semiconductor device utilizing polysilic

Details Method of fabricating a semiconductor device utilizing polysilic Method of fabricating a semiconductor device utilizing polysilic

1998-01-13

1999-09-28

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, H01L 2120

Patent

active

059602945

ABSTRACT:
A method of fabricating capacitors for a dynamic random access memory device reduces double bit failures or shorts in the device. The method includes providing a semiconductor substrate underlying an insulative layer having a plurality of storage cells formed therein electrically connected to the substrate. A first conductive layer of rugged polysilicon, which functions as a first capacitor plate, is formed over the insulative layer in an oxygen-free atmosphere such that the first conductive layer is without natural oxides on the surface thereof. The surface of the first conductive layer in the oxygen-free atmosphere is then conditioned by a rapid thermal nitridization process which forms a silicon nitride film thereon. Thereafter, portions of the first conductive layer are removed from the insulative layer such that the plurality of storage cells are electrically isolated from one another. A dielectric layer is then formed over the first conductive layer and exposed insulative layer, followed by a second conductive layer, functioning as a second capacitor plate, being formed over the dielectric layer to complete the capacitor structure.

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patent: 5817555 (1998-10-01), Cho

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