Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2007-07-20
2009-10-27
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S106000, C438S107000, C438S117000, C438S118000, C257SE21002, C257SE21703, C257SE23021, C257SE23133, C257SE27102
Reexamination Certificate
active
07608480
ABSTRACT:
A semiconductor device includes metal foil to which a ground potential is applied, at a semiconductor constructing body provided on the metal foil and having a semiconductor substrate and a plurality of external connection electrodes provided on the semiconductor substrate. An insulating layer is provided around the semiconductor constructing body and has a thickness substantially equal to the semiconductor constructing body. An one upper interconnecting layer is provided on the semiconductor constructing body and insulating layer, and electrically connected to the external connection electrodes. A vertical conducting portion extends through the insulating layer and electrically connects the metal foil and upper interconnecting layer.
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Casio Computer Co. Ltd.
CMK Corporation
Frishauf Holtz Goodman & Chick P.C.
Lebentritt Michael S
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