Method of fabricating a semiconductor device including selective

Details Method of fabricating a semiconductor device including selective Method of fabricating a semiconductor device including selective

1985-11-05

1988-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437985, 437200, 437245, 437238, 204 42, H01L 21283, H01L 21326

Patent

active

047420251

ABSTRACT:
A desired portion of a refractory metal silicide film is oxidized by anodic oxidation to form oxides of silicon and of metal. The oxides formed are completely removed by etching. By so doing, the desired portion of the silicide film can be etched selectively without badly damaging an underlying silicon substrate or silicon dioxide film. Therefore, it is possible to easily affect patterning of the silicide film used for electrodes of MOS transistors and bipolar transistors as well as resistors and interconnections.

REFERENCES:
patent: 4432035 (1984-02-01), Hsieh et al.
patent: 4589056 (1986-05-01), Stimmell
Tsai et al., "One-Micron Polycide", in J. Electrochem. Soc. Oct. 1981, vol 128, No. 10, pp 2207-2214.
Murarka, S. P. "Refractory Silicides for ICs" in J. Vac. Sci. Tech. vol. 17. No. 4, Jul./Aug. 1980, pp. 775-792.
Murarka, S. P., Silicides for VLSI Applications, Academic Press, 1983, TK 7871.15 554 1982, pp. 134-139.
Ghandhi, S. K., VLSI Fabrication Principles, John Wiley & Sons, 1983 pp. 400-411, 492-495.
Inoue et al. "Oxidation of Sputtered WSi.sub.2 ", in Appl. Phys. Lett. 33(9), Nov. 1978, pp. 826-827.
Ho et al., "Selective Anodic Oxidation of Silicon", IEEE Trans. on Electron Devices, vol. ED. 27, No. 8, Aug. 1980, pp. 1436-1443.
d'Heurle et al. "Oxidation of Silicide Thin Films: TiSi.sub.2 ", in Appl. Phys. Lett. 42(4), Feb. 15, 1983, pp. 361-363.
Zinnsky et al., "Oxidation Mechanisim in WSi.sub.2 Templates", in Appl. Phys. Lett. 33(1), Jul. 1, 1978, pp. 76-29.

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