Method of fabricating a semiconductor device having buried insul

Details Method of fabricating a semiconductor device having buried insul Method of fabricating a semiconductor device having buried insul

1989-05-15

1991-03-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 67, H01L 2176

Patent

active

049977865

ABSTRACT:
A method of fabricating a semiconductor device having a buried insulator region is constituted by forming ditches in a surface of the buried insulator region to be formed which is closest to the surface of the substrate, implanting ions of gas taken from the group consisting of oxygen and nitrogen into the substrate from the surface to form an ion implanted region corresponding to the desired buried insulator region, and heat treating the thus ion implanted substrate at a gas reaction temperature of at least 1100.degree. C. for forming the buried insulator region.

REFERENCES:
patent: 4490182 (1984-12-01), Scovell
patent: 4621276 (1986-11-01), Malhi
patent: 4725874 (1988-02-01), Ooga et al.
patent: 4800170 (1989-01-01), Jain et al.
patent: 4834809 (1989-05-01), Kakihara

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