Method of fabricating a semiconductor device having a capacitor

Fishing – trapping – and vermin destroying

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437 47, 437 48, 437 49, 437 52, 437978, 437986, 437919, 148DIG14, 257307, 257308, H01L 2128, H01L 21306, H01L 21336

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051643375

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. The method comprises the steps of: forming a multi-layer film comprising two or more kinds of layers; performing first etching for patterning said multi-layer film under a first etching condition; and performing second etching for forming irregularities in the side faces of said patterned multi-layer film under a second etching condition.

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patent: 5077225 (1991-12-01), Lee
patent: 5102820 (1992-04-01), Chiba
S. Inoue et al., "A New Stacked Capacitor Cell with Thin Box Structure Storage Node," Extended Abstracts of 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 141-144.
T. Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64 Drams":, IEDM Tech. 1988 (IEEE) pp. 592-595.

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