Method of fabricating a semiconductor device employing...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating

Reexamination Certificate

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Details

C438S459000, C438S460000, C257SE21001

Reexamination Certificate

active

07811904

ABSTRACT:
A method of fabricating a semiconductor device employing electroless plating including wafer backside protection during wet processing is disclosed. The method includes the steps of laminating a wafer back side and a frame with a protective tape, applying a protective coating to a peripheral portion of the wafer and an adjoining exposed area of the protective tape, the protective coating, protective tape, and wafer forming a protected wafer assembly, curing the frame-supported protective coating, cutting the protected wafer assembly from the protective tape surrounding the protective coating, wet processing the protected wafer assembly, laminating the protected wafer assembly with a second tape, dicing the wafer, and picking up the die from the protective tape.

REFERENCES:
patent: 6544902 (2003-04-01), Farnworth
patent: 6709953 (2004-03-01), Vasquez et al.
patent: 2003/0143818 (2003-07-01), Vasquez et al.
patent: 2005/0009299 (2005-01-01), Wada et al.
patent: 2006/0033678 (2006-02-01), Lubomirsky et al.

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