Method of fabricating a semiconductor device by reducing the imp

Fishing – trapping – and vermin destroying

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437151, 437247, 148DIG14, H01L 21225

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051734400

ABSTRACT:
In fabricating a semiconductor device, when impurities are diffused from a silicon oxide layer containing the impurities to a semiconductor layer, a diffusion atmosphere is controlled so as to oxidize or reduce a specified impurity to thereby control the diffusion coefficient of the impurities in the silicon oxide layer. Thus, it is possible to form a diffusion layer having a desired impurity profile under a good control.

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English translation of Japanese document #52-154344, made of record in paper #8, Aug. 2, 1991.
Saraswat et al., "A New Bipolar Process-Borsenic", IEEE J. of Sol. St. Cir., vol SC-11, No. 4, Aug. 1976.
Arai et al., "Structural [sic] Changes of Arsenic Silicate Glasses with Heat Treatments", Japanese Journal of Applied Physics, vol. 9, No. 6, Jun. 1970, pp. 691-704.

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