Method of fabricating a semiconductor device by capping a conduc

Details Method of fabricating a semiconductor device by capping a conduc Method of fabricating a semiconductor device by capping a conduc

1989-05-22

1990-05-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437984, H01L 21265

Patent

active

049238221

ABSTRACT:
A method of fabricating a semiconductor device in an integrated circuit. A conductive titanium layer is deposited on a substrate in which source, drain and gate regions have been created. A titanium nitride layer is applied as a cap over the titanium layer. A first anneal at a relatively low temperature is performed, causing portions of the titanium which are adjacent the silicon surface to form a titanium-silicon compound and causing the remaining titanium and titanium nitride to form a nitride coating. This nitride coating is etched away and a final high-temperature anneal is performed, resulting in thick, smooth titanium silicide (TiSi.sub.2) layers on the source and drain regions and gate pads.

REFERENCES:
patent: 4657628 (1987-04-01), Halloway et al.
patent: 4690730 (1987-09-01), Tang et al.
patent: 4701349 (1987-10-01), Koyanaji et al.
IEDM, Dec. 1-4, 1985, vol. ED-33, No. 11 pt. 1, Keneko, et al., "Novel submicrometer MOS Devises by Self-Aligned Nitridation of silicide" pp. 1702-1709.
Rapid Thermal Processing (1986) "Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen" Material Res. Soc. pp. 279-287.
Journal of Vacuum Science Technology A5 (4) Jul./Aug. 1987 Ho, et al., "Formation of Self-Aligned TiSi.sub.2 for VLSI Contacts and Interconnects" pp. 1396-1401.
Beam-Solid Interactions and Transient Processes Symposium, Dec. 1-4, 1986 Thompson, et al., "The Effects of Processing Ambient on the Reaction Rate of T and Si using Rapid Thermal Processing" pp. 665-73.

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