Method of fabricating a semiconductor device and a method of...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S427000, C438S430000, C438S437000

Reexamination Certificate

active

07115478

ABSTRACT:
At least a groove for separating a semiconductor substrate into a first region of a relatively large area and a second region of a relatively small area is formed. An insulating film is formed on the surface of the semiconductor substrate including the interior of the groove. The insulating film is etched using an etching mask having a lattice window pattern in such a manner that openings corresponding to the lattice window pattern are formed in the first region. As an alternative, openings corresponding to a single opening pattern are formed in the first region using an etching mask having the single opening pattern and the lattice window pattern, and the insulating film is etched in such a manner that openings corresponding to the lattice window pattern are formed in the second region. In both cases, the remaining insulating film is polished off.

REFERENCES:
patent: 5286927 (1994-02-01), Ueno et al.
patent: 5702977 (1997-12-01), Jang et al.
patent: 6205658 (2001-03-01), Kawano
patent: 2002/0123207 (2002-09-01), Horie et al.
patent: 10-22376 (1998-01-01), None
patent: 10-022376 (1998-01-01), None
patent: 2000-232153 (2000-08-01), None
patent: P2000-232153 (2000-08-01), None
patent: 2000-340567 (2000-12-01), None
patent: 2002-334925 (2002-11-01), None
patent: P2002-334925 (2002-11-01), None

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