Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2007-09-14

2010-11-02

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S042000, C438S700000, C257SE21039

Reexamination Certificate

active

07825031

ABSTRACT:
The invention relates to a method of fabricating an integrated circuit, including the steps of providing at least one layer; performing a first implantation step, wherein particles are implanted into the layer under a first direction of incidence; performing a second implantation step, wherein particles are implanted into the layer under a second direction of incidence which is different from the first direction of incidence; performing a removal step, wherein the layer is partially removed depending on the local implant dose generated by the first and the second implantation step.

REFERENCES:
patent: 7179748 (2007-02-01), Lee et al.
patent: 2006/0166419 (2006-07-01), Shimoyama et al.
Ogryzlo, E.A., et al., “Doping and crystallographic effects in Cl-atom etching of silicon,” Journal of Applied Physics, Mar. 15, 1990, pp. 3115-3120, vol. 67, Issue 6, American Institute of Physics.

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