Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2005-12-20

2008-03-04

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21551

Reexamination Certificate

active

07338880

ABSTRACT:
A method of fabricating a semiconductor device includes steps of forming at least one shallow-trench isolation region in a semiconductor substrate; forming a photoresist pattern for blocking a photodiode region; sequentially implanting dopant ions and boron ions into the at least one shallow-trench isolation region; and activating the implanted ions. Since germanium ions are implanted before implanting P-type ions in a channel-stop ion implantation process, the lattice structure of the surface of a shallow-trench isolation region is maintained, to thereby allow a deeper penetration of the implanted P-type ions (boron ions), and to prevent the P-type ions from being outwardly diffused according to an increased lattice scattering phenomenon generated upon a thermal process.

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