Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2006-05-23

2006-05-23

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Having organic semiconductive component

Reexamination Certificate

active

07049169

ABSTRACT:
According to the present invention, by applying a basic surface-processing agent to a film underlying a resist, the excessive photoacid present at the interface between the resist and the front-end film is neutralized and the pattern shape can be controlled. The present invention provides a method of manufacturing a semiconductor device including the steps of, forming an insulating film on a surface, applying a surface processing agent containing of at least a solvent and a basic component on the insulating film, applying a resist on the insulating film thus applied with the surface processing agent, patterning the resist by lithography, and transferring a resist pattern to the insulating film by a dry etching process.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 6284427 (2001-09-01), Okazaki et al.
patent: 6376152 (2002-04-01), Kawabe et al.
patent: 6692884 (2004-02-01), Fujimori et al.
patent: 2004/0259029 (2004-12-01), Nagahara et al.
patent: 0838727 (1997-10-01), None
patent: 2001-100400 (2001-04-01), None
patent: WO99/15935 (1999-04-01), None
Stanley Wolf Silicon Processing for the VSLI Era vol. 1 Lattice Press 1986 p. 518.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3635578